MRF6S18100NR1【PDF 12/21 页】MOSFET RF N-CH 28V 100W TO2704

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2

RF Device Data

Freescale Semiconductor

MRF6S18100NR1 MRF6S18100NBR1

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22--A114)

1B (Minimum)

Machine Model (per EIA/JESD22--A115)

A (Minimum)

Charge Device Model (per JESD22--C101)

IV (Minimum)

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD22--A113, IPC/JEDEC J--STD--020

3

260

°C

Table 5. Electrical Characteristics

(TC

=25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

(VDS

=68Vdc,VGS

=0Vdc)

IDSS

—

—

10

μAdc

Zero Gate Voltage Drain Leakage Current

(VDS

=28Vdc,VGS

=0Vdc)

IDSS

—

—

1

μAdc

Gate--Source Leakage Current

(VGS

=5Vdc,VDS

=0Vdc)

IGSS

—

—

500

nAdc

On Characteristics

Gate Threshold Voltage

(VDS

=10Vdc,ID

= 330

μAdc)

VGS(th)

1.6

2

3

Vdc

Gate Quiescent Voltage

(VDD

=28Vdc,ID

= 900 mAdc, Measured in Functional Test)

VGS(Q)

1.5

2.8

3.5

Vdc

Drain--Source On--Voltage

(VGS

=10Vdc,ID

=3.3Adc)

VDS(on)

—

0.24

—

Vdc

Dynamic Characteristics(1)

Reverse Transfer Capacitance

(VDS

=28Vdc±

30 mV(rms)ac @ 1 MHz, VGS

=0Vdc)

Crss

—

1.5

—

pF

Functional Tests

(In Freescale Test Fixture, 50 ohm system) VDD

=28Vdc,Pout

= 100 W, IDQ

= 900 mA, f = 1990 MHz

Power Gain

Gps

13

14.5

16

dB

Drain Efficiency

ηD

47

49

—

%

Input Return Loss

IRL

—

-- 1 2

-- 9

dB

Pout

@ 1 dB Compression Point

P1dB

100

110

—

W

Typical GSM EDGE Performances

(In Freescale GSM EDGE Test Fixture, 50 ohm system) VDD

=28Vdc,IDQ

= 700 mA, Pout

=40WAvg.,

1805--1880 MHz or 1930--1990 MHz EDGE Modulation

Power Gain

Gps

—

15

—

dB

Drain Efficiency

ηD

—

35

—

%

Error Vector Magnitude

EVM

—

2

—

%rms

Spectral Regrowth at 400 kHz Offset

SR1

—

-- 6 3

—

dBc

Spectral Regrowth at 600 kHz Offset

SR2

—

-- 7 6

—

dBc

Typical CW Performances

(In Freescale GSM Test Fixture, 50 ohm system) VDD

=28Vdc,IDQ

= 900 mA, Pout

= 100 W, 1805--1880 MHz

Power Gain

Gps

—

14.5

—

dB

Drain Efficiency

ηD

—

49

—

%

Input Return Loss

IRL

—

-- 1 2

—

dB

Pout

@ 1 dB Compression Point

P1dB

—

110

—

W

1. Part internally matched both on input and output.

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